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FDS9431A_F085 P-Channel 2.5V Specified MOSFET
February 2010
FDS9431A_F085
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
tm
Features *
-3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V RDS(ON) = 0.180 @ VGS = -2.5 V.
* * * * *
Fast switching speed. High density cell design for extremely low RDS(ON). High power and current handling capability. Qualified to AEC Q101 RoHS Compliant
Applications * * * *
DC/DC converter Power management Load switch Battery protection
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A=25 C unless otherwise noted
o
Parameter
Ratings
-20 8
(Note 1a)
Units
V V A W
-3.5 -18 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RqJA RqJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W C/W
Package Marking and Ordering Information
Device Marking FDS9431A Device FDS9431A_F085 Reel Size 13''
1
Tape width 12mm
Quantity 2500 units
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(c)2010 Fairchild Semiconductor Corporation FDS9431A_F085 Rev. A
FDS9431A_F085 P-Channel 2.5V Specified MOSFET
Electrical Characteristics
Symbol
BVDSS DBVDSS DTJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 mA ID = -250 mA,Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min
-20
Typ
Max Units
V
Off Characteristics
-28 -1 100 -100 mV/C mA nA nA
On Characteristics
VGS(th) DVGS(th) DTJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 mA ID = -250 mA,Referenced to 25C VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.5 A TJ=125C VGS = -4.5 V, VDS =-5 V VDS = -5 V, ID = -3.5 A
-0.4
-0.6 2 0.110 0.140 0.155
-1
V mV/C
0.130 0.180 0.220
W W W A
ID(on) gFS
On-State Drain Current Forward Transconductance
-10 6.5
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
405 170 45
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 W
6.5 20 31 21
13 35 50 35 8.5
ns ns ns ns nC nC nC
VDS = -5 V, ID = -3.5 A, VGS = -4.5 V
6 0.8 1.3
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A
(Note 2)
-2.1 -0.7 -1.2
A V
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50 C/W when mounted on a 1 in2 pad of 2 oz. copper.
b) 105 C/W when mounted on a 0.04 in2 pad of 2 oz. copper.
c) 125 C/W on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDS9431A_F085 Rev. A
2
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FDS9431A_F085 P-Channel 2.5V Specified MOSFET
Typical Characteristics
10 VGS= -4.5V -ID, DRAIN CURRENT (A) 8 -3.5V
RDS(ON) , NORMALIZED
-2.5V
DRAIN-SOURCE ON-RESISTANCE
2
1.8
VGS = -2.0V
1.6
6
-2.5
1.4
4
-2.0V
-3.0
1.2
-3.5 -4.0 -4.5
2 -1.5V 0 0 1 2 3 4 5
1
0.8 0 2 4 6 8 10 -I D , DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
0.5
V GS = -4.5V
1.4
1.2
R DS(ON) ,ON-RESISTANCE(OHM)
I D = -1.6A
I D = -0.8A
RDS(ON) , NORMALIZED
0.4
0.3
TJ = 125C
1
0.2
0.8
0.1
25C
0.6 -50
0
-25
0
25
50
75
100
125
150
1 -V
2
GS
3
4
5
TJ , JUNCTION TEMPERATURE (C)
,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
VDS = -5V
-I D , DRAIN CURRENT (A)
-I S , REVERSE DRAIN CURRENT (A)
10
10
TA = -55C 25C 125C
VGS = 0V
1
8
T = 125C J
0.1
6
25C -55C
4
0.01
2
0.001
0 0 1 2 3 4 -VGS , GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS9431A_F085 Rev. A
3
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FDS9431A_F085 P-Channel 2.5V Specified MOSFET
Typical Characteristics
(continued)
5 I D = -1.6A -V GS , G ATE -S O U R CE VO LTAG E (V ) 4 V D S = -5V
2000
1000 C AP AC I TA NC E (pF)
-15V 3
500
Ciss
2
200
Coss f = 1 M Hz VG S = 0 V
0.2 0.5 1 2 5
1
100
Crss
10 20
0 0 2 4 Q g , G ATE C H ARG E (nC ) 6 8
50 0.1
-V DS , D R A IN T O S OU R CE V OLTA GE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
IT LI M
100
S( O N)
50
us
40
10 - I D , D R AI N C U R R EN T (A)
RD
1m 10 m
100
1s 10 s DC
s
POWER (W)
SINGLE PULSE o RJA= 125 C/W TA= 25 C
o
3
s
30
ms
0 .5
20
0. 05
VV == -4.5V GS S -4.5V G SINGLE PUL SE SING L E PULSE = 135 C/W RR J A = 125C/W JA TA A= 25C T = 2 5C
A
10
0. 01 0 .1
0 .3
1
2
5
10
30
0 0.001
0.01
0.1
1
10
100
1000
- VD S , DR A IN -SO UR C E V OLTA GE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
TR ANSI ENT T ER M H AL RESISTANC E
1 0.5 0.2 0.1 0 .05 0 .02 0 .01 0. 05 0 0. 02 0 0. 01 0 0.0 001 0. 01 0 0 .01 0.1 t 1, TI ME (s e c ) 1 10 100 300
D= 0 .5 0 .2 0 .1 0. 5 0 0. 2 0 01 .0 S i n g le P ul s e
r(t), NORM AL IZED EFFECTIVE
R J A (t) = r(t) * R J A R J A= 125C /W
P(p k )
t1
t2
TJ - TA = P * RJA ( t ) D u t y C y c l e, D = t 1 /t 2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.
FDS9431A_F085 Rev. A
4
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FDS9431A_F085 P-Channel 2.5V Specified MOSFET
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Rev. I47
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDS9431A_F085 Rev. A
5
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